STF11NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Pins :

3

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Rise Time :

7ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

10A

Series :

FDmesh™ II

Turn-Off Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Pin Count :

3

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Drain to Source Breakdown Voltage :

600V

Case Connection :

Isolated

Turn On Delay Time :

16 ns

Drain-source On Resistance-Max :

0.45Ohm

Base Part Number :

STF11

Package / Case :

TO-220-3 Full Pack

Height :

16.4mm

ECCN Code :

EAR99

Packaging :

Tube

Avalanche Energy Rating (Eas) :

200 mJ

Power Dissipation :

90W

Mount :

Through Hole

Power Dissipation-Max :

25W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Width :

4.6mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

40A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V