STF11NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

FET Type :

N-Channel

JESD-609 Code :

e3

Continuous Drain Current (ID) :

8.5A

Fall Time (Typ) :

10 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

33 ns

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Resistance :

470mOhm

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Base Part Number :

STF11

Radiation Hardening :

No

Packaging :

Tube

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

547pF @ 50V

Rds On (Max) @ Id, Vgs :

470m Ω @ 4.5A, 10V

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Vgs (Max) :

±25V

Number of Pins :

3

Threshold Voltage :

3V

Width :

4.6mm

Turn On Delay Time :

8 ns

Operating Temperature :

150°C TJ

Height :

16.4mm

Lead Free :

Lead Free

Power Dissipation-Max :

25W Tc

Drain to Source Breakdown Voltage :

500V

Package / Case :

TO-220-3 Full Pack

REACH SVHC :

No SVHC

Element Configuration :

Single

Rise Time :

10ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Power Dissipation :

25W

ECCN Code :

EAR99