STF11N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

35W Tc

Transistor Element Material :

SILICON

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Turn On Delay Time :

14.5 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 50V

Power Dissipation :

35W

Rise Time :

14ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

650V

Pulsed Drain Current-Max (IDM) :

40A

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±30V

Number of Terminations :

3

Case Connection :

Isolated

Fall Time (Typ) :

35 ns

Drain-source On Resistance-Max :

0.85Ohm

Turn-Off Delay Time :

44 ns

Base Part Number :

STF11

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Series :

SuperMESH3™

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

212 mJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.6A, 10V

Continuous Drain Current (ID) :

11A