STF110N10F7
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- Mfr.Part #
- STF110N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 45A TO220FP
- Stock
- 8,447
- In Stock ：
- 8,447
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- DeepGATE™, STripFET™ VII
- Turn On Delay Time :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain to Source Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 45A
- Number of Pins :
- 3
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 30W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 4.6mm
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Turn-Off Delay Time :
- 52 ns
- Fall Time (Typ) :
- 21 ns
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 22.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 16.4mm
- FET Type :
- N-Channel
- Length :
- 10.4mm
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Element Configuration :
- Single
- Rise Time :
- 36ns
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Mount :
- Through Hole
- Base Part Number :
- STF11
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5117pF @ 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Channels :
- 1
- Datasheets
- STF110N10F7
N-Channel Tube 7m Ω @ 22.5A, 10V ±20V 5117pF @ 50V 72nC @ 10V TO-220-3 Full Pack
STF110N10F7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5117pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 45A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF110N10F7 Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 52 ns
STF110N10F7 Applications
There are a lot of STMicroelectronics
STF110N10F7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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