STF10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

DeepGATE™, STripFET™ VI

Drain-source On Resistance-Max :

0.16Ohm

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

80 mJ

Lifecycle Status :

NRND (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Mount :

Through Hole

Packaging :

Tube

Operating Temperature :

150°C TJ

Fall Time (Typ) :

3.7 ns

Power Dissipation :

20W

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

7.2A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Turn On Delay Time :

64 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Case Connection :

DRAIN

JEDEC-95 Code :

TO-251

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

14 ns

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

20W Tc

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Number of Pins :

3

Vgs (Max) :

±20V

Base Part Number :

STF10P

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Rise Time :

5.3ns

Continuous Drain Current (ID) :

10A

ECCN Code :

EAR99