STF10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Length :

10.4mm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Power Dissipation :

25W

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Height :

16.4mm

Element Configuration :

Single

Drain-source On Resistance-Max :

0.48Ohm

Power Dissipation-Max :

25W Tc

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Dual Supply Voltage :

650V

Mounting Type :

Through Hole

Turn-Off Delay Time :

50 ns

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

4.5A

Packaging :

Tube

FET Type :

N-Channel

Termination :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

9A

Vgs (Max) :

±25V

Fall Time (Typ) :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Base Part Number :

STF10N

Series :

MDmesh™ II

Transistor Element Material :

SILICON

Nominal Vgs :

3 V

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Drain to Source Breakdown Voltage :

650V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

Isolated

Width :

4.6mm

Rise Time :

8ns

Number of Elements :

1

Radiation Hardening :

No