STF10NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Pin Count :

3

Lead Free :

Lead Free

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Element Configuration :

Single

Power Dissipation :

25W

Turn-Off Delay Time :

32 ns

Power Dissipation-Max :

25W Tc

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

9.2 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Series :

FDmesh™ II

Gate to Source Voltage (Vgs) :

25V

Resistance :

550mOhm

Height :

16.4mm

Terminal Finish :

Matte Tin (Sn) - annealed

REACH SVHC :

No SVHC

Base Part Number :

STF10N

Rise Time :

10ns

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

16 Weeks

Mount :

Through Hole

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Threshold Voltage :

4V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

650V

Case Connection :

Isolated

ECCN Code :

EAR99

Number of Elements :

1

Fall Time (Typ) :

9.8 ns

Operating Temperature :

-55°C~150°C TJ

Width :

4.6mm

Packaging :

Tube

Continuous Drain Current (ID) :

8A