STF10NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

25W

Threshold Voltage :

3V

Width :

4.6mm

Length :

10.4mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Series :

MDmesh™ II

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.55Ohm

Vgs (Max) :

±25V

Mount :

Through Hole

Transistor Application :

SWITCHING

Packaging :

Tube

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Contact Plating :

Tin

Continuous Drain Current (ID) :

10A

Number of Elements :

1

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

8A

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Rise Time :

12ns

Factory Lead Time :

16 Weeks

Base Part Number :

STF10N

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

REACH SVHC :

No SVHC

Case Connection :

Isolated

Height :

16.4mm

Element Configuration :

Single

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

32 ns

Radiation Hardening :

No

FET Type :

N-Channel

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation-Max :

25W Tc

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ