STD1802T4-A
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- Mfr.Part #
- STD1802T4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 6,898
- In Stock ：
- 6,898
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Base Part Number :
- STD18
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Max Power Dissipation :
- 15W
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Frequency :
- 150MHz
- Power Dissipation :
- 15W
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STD1802T4-A
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
STD1802T4-A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4-A Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4-A Applications
There are a lot of STMicroelectronics
STD1802T4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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