STD100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Base Part Number :

STD10

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Threshold Voltage :

4.5V

Operating Temperature :

-55°C~175°C TJ

Series :

DeepGATE™, STripFET™ VII

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

8mOhm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Power Dissipation-Max :

120W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Number of Elements :

1

Number of Pins :

3

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

Turn On Delay Time :

27 ns

Length :

6.6mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

6.2mm

Element Configuration :

Single

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

46 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Height :

2.4mm

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Mount :

Surface Mount

Case Connection :

Isolated

Power Dissipation :

120W

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating (Eas) :

400 mJ