STD127DT4

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Mfr.Part #
STD127DT4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 400V 4A DPAK
Stock
2,417
In Stock :
2,417

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
1.3V
Max Power Dissipation :
35W
Max Breakdown Voltage :
400V
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 1A 5V
Packaging :
Tape and Reel (TR)
hFE Min :
5
Number of Pins :
3
Radiation Hardening :
No
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Base Part Number :
STD12
Mount :
Surface Mount
Weight :
350.003213mg
Emitter Base Voltage (VEBO) :
18V
Lifecycle Status :
NRND (Last Updated: 8 months ago)
Collector Emitter Voltage (VCEO) :
400V
Mounting Type :
Surface Mount
Max Collector Current :
4A
Number of Terminations :
2
Transistor Application :
SWITCHING
Element Configuration :
Single
Operating Temperature :
150°C TJ
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 1A, 4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
250μA
Number of Elements :
1
Transistor Type :
NPN
Continuous Collector Current :
4A
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
400V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
STD127DT4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STD127DT4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:STD12, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, STD127DT4 pinout, STD127DT4 datasheet PDF, STD127DT4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STD127DT4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD127DT4


NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

STD127DT4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 1A 5V.With a collector emitter saturation voltage of 1.3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 1A, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 18V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 4A volts at its maximum.

STD127DT4 Features


the DC current gain for this device is 10 @ 1A 5V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 1A, 4A
the emitter base voltage is kept at 18V


STD127DT4 Applications


There are a lot of STMicroelectronics
STD127DT4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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