SSTA56T116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

-80V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

350mW

Polarity/Channel Type :

PNP

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

VCEsat-Max :

0.25 V

Transition Frequency :

50MHz

Pbfree Code :

yes

Transistor Type :

PNP

Max Breakdown Voltage :

80V

Collector Base Voltage (VCBO) :

80V

Power - Max :

350mW

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Current - Collector Cutoff (Max) :

1μA

Max Collector Current :

500mA

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

4V

HTS Code :

8541.21.00.95

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

50MHz

Base Part Number :

STA56

Transistor Element Material :

SILICON

Element Configuration :

Single

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Number of Elements :

1

Current Rating :

-500mA

Collector Emitter Voltage (VCEO) :

80V

Terminal Position :

Dual

hFE Min :

100

Published :

2008

Package / Case :

TO-236-3, SC-59, SOT-23-3