SSTA06T116
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- Mfr.Part #
- SSTA06T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SST3
- Stock
- 5,547
- In Stock ：
- 5,547
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Frequency - Transition :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Emitter Base Voltage (VEBO) :
- 4V
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Max Operating Temperature :
- 150°C
- hFE Min :
- 100
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 500mA
- Termination :
- SMD/SMT
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 250mV
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Mount :
- Surface Mount
- Continuous Collector Current :
- 500mA
- Factory Lead Time :
- 13 Weeks
- Supplier Device Package :
- SST3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 500mA
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 250mV
- Base Part Number :
- STA06
- Power - Max :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Published :
- 2007
- Transistor Type :
- NPN
- Max Power Dissipation :
- 350mW
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Datasheets
- SSTA06T116
NPN 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SSTA06T116 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.Product package SST3 comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 500mA volts is possible.
SSTA06T116 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SST3
SSTA06T116 Applications
There are a lot of ROHM Semiconductor
SSTA06T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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