SS9013GBU

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Mfr.Part #
SS9013GBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 20V 0.5A TO92-3
Stock
8,558
In Stock :
8,558

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Current - Collector (Ic) (Max) :
500mA
Voltage - Collector Emitter Breakdown (Max) :
20V
Pin Count :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Power - Max :
625mW
Vce Saturation (Max) @ Ib, Ic :
600mV @ 50mA, 500mA
Operating Temperature :
150°C TJ
Configuration :
Single
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Number of Terminations :
3
Qualification Status :
COMMERCIAL
Reach Compliance Code :
Unknown
JESD-30 Code :
O-PBCY-T3
Terminal Position :
BOTTOM
Transistor Application :
AMPLIFIER
Surface Mount :
No
Mounting Type :
Through Hole
Packaging :
Bulk
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
112 @ 50mA 1V
Transistor Element Material :
SILICON
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
MATTE TIN
Datasheets
SS9013GBU
Introducing Transistors - Bipolar (BJT) - Single onsemi SS9013GBU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), SS9013GBU pinout, SS9013GBU datasheet PDF, SS9013GBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS9013GBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SS9013GBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

SS9013GBU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 112 @ 50mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (20V maximal voltage).

SS9013GBU Features


the DC current gain for this device is 112 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA


SS9013GBU Applications


There are a lot of Rochester Electronics, LLC
SS9013GBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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