SQJB00EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 250µA

FET Type :

2 N-Channel (Dual)

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

26.5 mJ

Series :

Automotive, AEC-Q101, TrenchFET®

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Package / Case :

PowerPAK® SO-8 Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power - Max :

48W

FET Feature :

Standard

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.013Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

84A

Terminal Form :

Gull wing

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

25A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4