SQJB60EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2016

Number of Pins :

6

ECCN Code :

EAR99

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Continuous Drain Current (ID) :

30A

Package / Case :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.012Ohm

REACH SVHC :

No SVHC

Series :

Automotive, AEC-Q101, TrenchFET®

FET Feature :

Standard

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 10V

Number of Elements :

2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

84A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

48W

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PSSO-G4

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR