SQJ488EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G4

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

83W Tc

Element Configuration :

Single

Fall Time (Typ) :

4.6 ns

Mount :

Surface Mount

Turn On Delay Time :

4 ns

Number of Terminations :

4

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.37mm

Number of Elements :

1

ECCN Code :

EAR99

Height :

1.07mm

Factory Lead Time :

12 Weeks

Number of Channels :

1

Gate to Source Voltage (Vgs) :

2V

Rds On (Max) @ Id, Vgs :

21m Ω @ 7.4A, 10V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Continuous Drain Current (ID) :

32A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

979pF @ 25V

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Published :

2016

Transistor Element Material :

SILICON

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

42A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101, TrenchFET®

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE