SQJ412EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Power Dissipation :

83W

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 20V

Published :

2014

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Operating Temperature :

175°C

Rds On Max :

4.1 mΩ

Nominal Vgs :

2 V

Supplier Device Package :

PowerPAK® SO-8

Power Dissipation-Max :

83W Tc

Number of Channels :

1

Drain to Source Resistance :

4.5mOhm

Fall Time (Typ) :

55 ns

Input Capacitance :

5.95nF

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

32A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

PowerPAK® SO-8

Factory Lead Time :

12 Weeks

Turn On Delay Time :

45 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

FET Type :

N-Channel

Threshold Voltage :

2V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

150ns

Weight :

506.605978mg

Turn-Off Delay Time :

50 ns

Number of Pins :

8

Series :

Automotive, AEC-Q101, TrenchFET®

Rds On (Max) @ Id, Vgs :

4.1mOhm @ 10.3A, 10V

Radiation Hardening :

No