SQJ402EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Element Configuration :

Single

FET Type :

N-Channel

Mounting Type :

Surface Mount

Width :

4.37mm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2289pF @ 40V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Published :

2016

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

75A

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Lead Free :

Lead Free

Power Dissipation-Max :

83W Tc

JESD-30 Code :

R-PSSO-G4

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

Unknown

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Series :

Automotive, AEC-Q101, TrenchFET®

Rds On (Max) @ Id, Vgs :

11m Ω @ 10A, 10V

Continuous Drain Current (ID) :

32A

ECCN Code :

EAR99

Rise Time :

10ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Height :

1.07mm

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

7 ns

RoHS Status :

ROHS3 Compliant

Length :

4.9mm

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Number of Channels :

1

Turn-Off Delay Time :

27 ns