SQJ479EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

33m Ω @ 10A, 10V

Power Dissipation :

68W

Turn-Off Delay Time :

50 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Package / Case :

PowerPAK® SO-8

Drain to Source Breakdown Voltage :

-80V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain-source On Resistance-Max :

0.033Ohm

Turn On Delay Time :

15 ns

Number of Terminations :

4

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, TrenchFET®

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G4

Power Dissipation-Max :

68W Tc

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

80 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Number of Channels :

1

FET Type :

P-Channel

Height :

1.267mm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-32A

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED