SQJ474EP-T2_GE3
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- Mfr.Part #
- SQJ474EP-T2_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 26A PPAK SO-8
- Stock
- 41,719
- In Stock ：
- 41,719
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 45W Tc
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 10A, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- PowerPAK® SO-8
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 100V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Datasheets
- SQJ474EP-T2_GE3
N-Channel Tape & Reel (TR) 30mOhm @ 10A, 10V ±20V 1100pF @ 25V 30nC @ 10V 100V PowerPAK® SO-8
SQJ474EP-T2_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SQJ474EP-T2_GE3 Features
a 100V drain to source voltage (Vdss)
SQJ474EP-T2_GE3 Applications
There are a lot of Vishay Siliconix
SQJ474EP-T2_GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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