SQJ474EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

ECCN Code :

EAR99

Case Connection :

DRAIN

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

30m Ω @ 10A, 10V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

26A

Number of Terminations :

4

Factory Lead Time :

12 Weeks

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

65A

Power Dissipation-Max :

45W Tc

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.03Ohm

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Surface Mount :

yes

Series :

Automotive, AEC-Q101, TrenchFET®

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Package / Case :

PowerPAK® SO-8

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

24 mJ

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant