SQJ459EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

4586pF @ 30V

Avalanche Energy Rating (Eas) :

80 mJ

Turn-Off Delay Time :

88 ns

Drain to Source Breakdown Voltage :

-60V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Pulsed Drain Current-Max (IDM) :

200A

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

PowerPAK® SO-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

18m Ω @ 3.5A, 10V

Power Dissipation-Max :

83W Tc

Transistor Element Material :

SILICON

Number of Terminations :

4

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2017

Reach Compliance Code :

Unknown

Terminal Position :

Single

Max Junction Temperature (Tj) :

175°C

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G4

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

-52A

Current - Continuous Drain (Id) @ 25°C :

52A Tc

RoHS Status :

ROHS3 Compliant

Height :

1.267mm

Number of Channels :

1

Terminal Form :

Gull wing

Power Dissipation :

83W

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mounting Type :

Surface Mount