SQJ456EP-T1_GE3
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- Mfr.Part #
- SQJ456EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 32A PPAK SO-8
- Stock
- 4,943
- In Stock ：
- 4,943
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 12ns
- Drain to Source Voltage (Vdss) :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 3V
- Turn On Delay Time :
- 14 ns
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 32A
- Drain to Source Resistance :
- 26mOhm
- Weight :
- 506.605978mg
- Mount :
- Surface Mount
- Nominal Vgs :
- 3 V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 8 ns
- Supplier Device Package :
- PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- FET Type :
- N-Channel
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation-Max :
- 83W Tc
- Power Dissipation :
- 83W
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Turn-Off Delay Time :
- 35 ns
- Rds On Max :
- 26 mΩ
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 3.342nF
- Number of Pins :
- 8
- REACH SVHC :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 9.3A, 10V
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3342pF @ 25V
- Radiation Hardening :
- No
- Datasheets
- SQJ456EP-T1_GE3
N-Channel Tape & Reel (TR) 26mOhm @ 9.3A, 10V ±20V 3342pF @ 25V 63nC @ 10V 100V PowerPAK® SO-8
SQJ456EP-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3342pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 26mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SQJ456EP-T1_GE3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 26mOhm
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)
SQJ456EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ456EP-T1_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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