SQJ446EP-T1_GE3
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- Mfr.Part #
- SQJ446EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 60A PPAK SO-8
- Stock
- 22,960
- In Stock ：
- 22,960
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- PowerPAK® SO-8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Package / Case :
- PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 14A, 10V
- Power Dissipation-Max :
- 46W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4220pF @ 20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- SQJ446EP-T1_GE3
N-Channel Tape & Reel (TR) 5mOhm @ 14A, 10V ±20V 4220pF @ 20V 65nC @ 10V 40V PowerPAK® SO-8
SQJ446EP-T1_GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4220pF @ 20V maximal input capacitance.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SQJ446EP-T1_GE3 Features
a 40V drain to source voltage (Vdss)
SQJ446EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ446EP-T1_GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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