SQJ431EP-T1_GE3

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Mfr.Part #
SQJ431EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET P-CH 200V 12A PPAK SO-8
Stock
53,622
In Stock :
53,622

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4355pF @ 25V
Mounting Type :
Surface Mount
Power Dissipation-Max :
83W Tc
Rds On (Max) @ Id, Vgs :
213mOhm @ 1A, 4V
Published :
2016
Drain to Source Voltage (Vdss) :
200V
Vgs (Max) :
±20V
Package / Case :
PowerPAK® SO-8
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
178mOhm
FET Type :
P-Channel
Factory Lead Time :
12 Weeks
Supplier Device Package :
PowerPAK® SO-8
Series :
Automotive, AEC-Q101, TrenchFET®
Operating Temperature :
-55°C~175°C TJ
Datasheets
SQJ431EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJ431EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~175°C TJ, SQJ431EP-T1_GE3 pinout, SQJ431EP-T1_GE3 datasheet PDF, SQJ431EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJ431EP-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJ431EP-T1_GE3


P-Channel Tape & Reel (TR) 213mOhm @ 1A, 4V ±20V 4355pF @ 25V 160nC @ 10V 200V PowerPAK® SO-8

SQJ431EP-T1_GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4355pF @ 25V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 178mOhm.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

SQJ431EP-T1_GE3 Features


single MOSFETs transistor is 178mOhm
a 200V drain to source voltage (Vdss)


SQJ431EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJ431EP-T1_GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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