SQJ418EP-T2_GE3
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- Mfr.Part #
- SQJ418EP-T2_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 48A PPAK SO-8
- Stock
- 16,902
- In Stock ：
- 16,902
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Package / Case :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Series :
- TrenchFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 68W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Supplier Device Package :
- PowerPAK® SO-8
- Vgs (Max) :
- ±20V
- Datasheets
- SQJ418EP-T2_GE3
N-Channel Tape & Reel (TR) 14mOhm @ 10A, 10V ±20V 1700pF @ 25V 35nC @ 10V 100V PowerPAK® SO-8
SQJ418EP-T2_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1700pF @ 25V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SQJ418EP-T2_GE3 Features
a 100V drain to source voltage (Vdss)
SQJ418EP-T2_GE3 Applications
There are a lot of Vishay Siliconix
SQJ418EP-T2_GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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