SQJ418EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

160A

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 10V

Power Dissipation-Max :

68W Tc

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G4

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.014Ohm

Reach Compliance Code :

Unknown

Terminal Position :

Single

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchFET®

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Avalanche Energy Rating (Eas) :

65 mJ

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

PowerPAK® SO-8

Case Connection :

DRAIN