SPW47N65C3FKSA1
- Mfr.Part #
- SPW47N65C3FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 47A TO247-3
- Stock
- 595
- In Stock :
- 595
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 650V
- Power Dissipation :
- 415W
- Fall Time (Typ) :
- 14 ns
- Vgs(th) (Max) @ Id :
- 3.9V @ 2.7mA
- Turn-Off Delay Time :
- 210 ns
- Power Dissipation-Max :
- 415W Tc
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 30A, 10V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- JEDEC-95 Code :
- TO-247AD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Turn On Delay Time :
- 100 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- CoolMOS™
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 47A
- FET Type :
- N-Channel
- Rise Time :
- 27ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.07Ohm
- Published :
- 2007
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Datasheets
- SPW47N65C3FKSA1

N-Channel Tube 70m Ω @ 30A, 10V ±20V 7000pF @ 25V 255nC @ 10V TO-247-3
SPW47N65C3FKSA1 Overview
A device's maximum input capacitance is 7000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 210 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 100 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
SPW47N65C3FKSA1 Features
a continuous drain current (ID) of 47A
the turn-off delay time is 210 ns
SPW47N65C3FKSA1 Applications
There are a lot of Infineon Technologies
SPW47N65C3FKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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