SPW47N60C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

70m Ω @ 30A, 10V

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1800 mJ

Pulsed Drain Current-Max (IDM) :

141A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.07Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Power Dissipation-Max :

415W Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

320nC @ 10V

Pin Count :

3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-247AC

JESD-609 Code :

e3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

47A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Number of Elements :

1

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

Factory Lead Time :

8 Weeks

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

650V