SPW47N60CFDFKSA1
- Mfr.Part #
- SPW47N60CFDFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 46A TO247-3
- Stock
- 21,797
- In Stock :
- 21,797
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Package / Case :
- TO-247-3
- Series :
- CoolMOS™
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 322nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 7700pF @ 25V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Drain-source On Resistance-Max :
- 0.083Ohm
- Power Dissipation-Max :
- 417W Tc
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- Published :
- 2008
- Drain Current-Max (Abs) (ID) :
- 46A
- JEDEC-95 Code :
- TO-247AA
- Terminal Position :
- Single
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 115A
- Vgs(th) (Max) @ Id :
- 5V @ 2.9mA
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 83m Ω @ 29A, 10V
- Packaging :
- Tube
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- SPW47N60CFDFKSA1

N-Channel Tube 83m Ω @ 29A, 10V ±20V 7700pF @ 25V 322nC @ 10V 600V TO-247-3
SPW47N60CFDFKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1800 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7700pF @ 25V.46A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 115A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
SPW47N60CFDFKSA1 Features
the avalanche energy rating (Eas) is 1800 mJ
based on its rated peak drain current 115A.
a 600V drain to source voltage (Vdss)
SPW47N60CFDFKSA1 Applications
There are a lot of Infineon Technologies
SPW47N60CFDFKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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