SPW24N60CFDFKSA1
- Mfr.Part #
- SPW24N60CFDFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 21.7A TO247-3
- Stock
- 28,125
- In Stock :
- 28,125
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 240W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3160pF @ 25V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 21.7A
- Series :
- CoolMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 21.7A Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 143nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 185m Ω @ 15.4A, 10V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 55A
- Vgs(th) (Max) @ Id :
- 5V @ 1.2mA
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.185Ohm
- Drain to Source Voltage (Vdss) :
- 650V
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 600V
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 780 mJ
- JEDEC-95 Code :
- TO-247AD
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Published :
- 2008
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- SPW24N60CFDFKSA1

N-Channel Tube 185m Ω @ 15.4A, 10V ±20V 3160pF @ 25V 143nC @ 10V 650V TO-247-3
SPW24N60CFDFKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 780 mJ.A device's maximal input capacitance is 3160pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 21.7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 55A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
SPW24N60CFDFKSA1 Features
the avalanche energy rating (Eas) is 780 mJ
based on its rated peak drain current 55A.
a 650V drain to source voltage (Vdss)
SPW24N60CFDFKSA1 Applications
There are a lot of Infineon Technologies
SPW24N60CFDFKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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