SPW24N60CFDFKSA1

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Mfr.Part #
SPW24N60CFDFKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 21.7A TO247-3
Stock
28,125
In Stock :
28,125

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
240W Tc
Input Capacitance (Ciss) (Max) @ Vds :
3160pF @ 25V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Terminal Finish :
Tin (Sn)
Drain Current-Max (Abs) (ID) :
21.7A
Series :
CoolMOS™
Current - Continuous Drain (Id) @ 25°C :
21.7A Tc
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
143nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
185m Ω @ 15.4A, 10V
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
55A
Vgs(th) (Max) @ Id :
5V @ 1.2mA
Transistor Application :
SWITCHING
Number of Terminations :
3
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.185Ohm
Drain to Source Voltage (Vdss) :
650V
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
DS Breakdown Voltage-Min :
600V
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
780 mJ
JEDEC-95 Code :
TO-247AD
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Published :
2008
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Datasheets
SPW24N60CFDFKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPW24N60CFDFKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, SPW24N60CFDFKSA1 pinout, SPW24N60CFDFKSA1 datasheet PDF, SPW24N60CFDFKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPW24N60CFDFKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPW24N60CFDFKSA1


N-Channel Tube 185m Ω @ 15.4A, 10V ±20V 3160pF @ 25V 143nC @ 10V 650V TO-247-3

SPW24N60CFDFKSA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 780 mJ.A device's maximal input capacitance is 3160pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 21.7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 55A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SPW24N60CFDFKSA1 Features


the avalanche energy rating (Eas) is 780 mJ
based on its rated peak drain current 55A.
a 650V drain to source voltage (Vdss)


SPW24N60CFDFKSA1 Applications


There are a lot of Infineon Technologies
SPW24N60CFDFKSA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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