SPW20N60C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Power Dissipation-Max :

208W Tc

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

190m Ω @ 13.1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.9V @ 1mA

JEDEC-95 Code :

TO-247AD

Pulsed Drain Current-Max (IDM) :

62.1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

690 mJ

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Vgs (Max) :

±20V

Number of Terminations :

3

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

20.7A

Series :

CoolMOS™

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Pin Count :

3

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.19Ohm

Factory Lead Time :

40 Weeks

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V