SPW20N60CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Package / Case :

TO-247-3

Mount :

Through Hole

Vgs (Max) :

±20V

Terminal Position :

Single

Max Dual Supply Voltage :

600V

Rise Time :

15ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Avalanche Energy Rating (Eas) :

690 mJ

Fall Time (Typ) :

6.4 ns

Number of Elements :

1

Current Rating :

20.7A

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 1mA

Power Dissipation :

35W

Rds On (Max) @ Id, Vgs :

220m Ω @ 13.1A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.22Ohm

Series :

CoolMOS™

Voltage - Rated DC :

650V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Turn-Off Delay Time :

59 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

20.7A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

208W Tc

Mounting Type :

Through Hole

Number of Pins :

3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Radiation Hardening :

No

Published :

2005

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

52A

Pin Count :

3