SPP47N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

26m Ω @ 33A, 10V

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Reach Compliance Code :

Unknown

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Number of Pins :

3

Terminal Position :

Single

Continuous Drain Current (ID) :

47A

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

175W Tc

Mounting Type :

Through Hole

Number of Terminations :

3

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Current Rating :

47A

Pulsed Drain Current-Max (IDM) :

188A

Mount :

Through Hole

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.04Ohm

Vgs(th) (Max) @ Id :

2V @ 2mA

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Avalanche Energy Rating (Eas) :

400 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Qualification Status :

Not Qualified

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

TO-220-3

Series :

SIPMOS®