SPP47N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

175W Tc

Drain-source On Resistance-Max :

0.033Ohm

Mount :

Through Hole

Package / Case :

TO-220-3

Lead Free :

Contains Lead

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Current Rating :

47A

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

33m Ω @ 33A, 10V

JESD-30 Code :

R-PSFM-T3

Published :

2002

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

188A

ECCN Code :

EAR99

Packaging :

Tube

Series :

SIPMOS®

Number of Terminations :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

47A

JESD-609 Code :

e3

Pin Count :

3

Avalanche Energy Rating (Eas) :

400 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs (Max) :

±20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 2mA

Current - Continuous Drain (Id) @ 25°C :

47A Tc