SPP42N03S2L13

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

12.9m Ω @ 21A, 10V

Continuous Drain Current (ID) :

42A

Series :

OptiMOS™

Rise Time :

12ns

Current Rating :

42A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Pin Count :

3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0199Ohm

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

83W Tc

Avalanche Energy Rating (Eas) :

110 mJ

Qualification Status :

Not Qualified

Turn-Off Delay Time :

24 ns

Element Configuration :

Single

Published :

2003

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

248A

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

30.5nC @ 10V

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

83W

Voltage - Rated DC :

30V

Number of Pins :

3

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 37μA

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

Mount :

Through Hole

Packaging :

Tube

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

14.5 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED