SPD18P06PGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

80W

Power Dissipation-Max :

80W Tc

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24.5 ns

Fall Time (Typ) :

11 ns

Published :

1999

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Max Dual Supply Voltage :

-60V

Pulsed Drain Current-Max (IDM) :

74.4A

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

JEDEC-95 Code :

TO-252AB

Continuous Drain Current (ID) :

18.6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

18.6A Tc

Additional Feature :

AVALANCHE RATED

FET Type :

P-Channel

Mount :

Surface Mount

Pin Count :

4

Rise Time :

5.8ns

Transistor Element Material :

SILICON

Number of Terminations :

2

Turn On Delay Time :

12 ns

Number of Pins :

3

Series :

SIPMOS®

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

18 Weeks

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Halogen Free :

Not Halogen Free

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

No