SPD11N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

29 ns

Operating Temperature :

-55°C~175°C TJ

Rise Time :

46ns

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Pin Count :

4

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

50W Tc

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Voltage - Rated DC :

100V

Element Configuration :

Single

Series :

SIPMOS®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

50W

ECCN Code :

EAR99

Fall Time (Typ) :

23 ns

Current Rating :

10.5A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

60 mJ

Published :

2002

Vgs(th) (Max) @ Id :

4V @ 21μA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

10.5A

Rds On (Max) @ Id, Vgs :

170m Ω @ 7.8A, 10V

FET Type :

N-Channel