SPD11N10
- Mfr.Part #
- SPD11N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.5A TO252-3
- Stock
- 12,569
- In Stock :
- 12,569
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 29 ns
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 46ns
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Pin Count :
- 4
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 50W Tc
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 100V
- Element Configuration :
- Single
- Series :
- SIPMOS®
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 50W
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 23 ns
- Current Rating :
- 10.5A
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Published :
- 2002
- Vgs(th) (Max) @ Id :
- 4V @ 21μA
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 10.5A
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.8A, 10V
- FET Type :
- N-Channel
- Datasheets
- SPD11N10
SPD11N10 Documents

N-Channel Tape & Reel (TR) 170m Ω @ 7.8A, 10V ±20V 400pF @ 25V 18.3nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD11N10 Description
SPD11N10 is a SIPMOS power transistor, manufactured by Infineon Technologies.
SPD11N10 Features
-
N-Channel
-
dv/dt rated
-
Avalanche rated
-
Enhancement mode
-
175°C operating temperature
SPD11N10 Applications
-
Primary side switch
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