SPD15P10PGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

FET Type :

P-Channel

Fall Time (Typ) :

16 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Power Dissipation-Max :

128W Tc

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Height :

2.41mm

JEDEC-95 Code :

TO-252AA

Lead Free :

Contains Lead, Lead Free

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

15A

Number of Terminations :

2

Vgs (Max) :

±20V

Width :

6.22mm

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

3

Pbfree Code :

No

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

9.5 ns

Gate to Source Voltage (Vgs) :

20V

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, SIPMOS®

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.24Ohm

Case Connection :

DRAIN

Max Dual Supply Voltage :

-100V

Halogen Free :

Not Halogen Free

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-100V

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

-3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.1V @ 1.54mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Published :

2007

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation :

128W

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Rise Time :

23ns

Rds On (Max) @ Id, Vgs :

240m Ω @ 10.6A, 10V

Turn-Off Delay Time :

33 ns