SPD15N06S2L64

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Power Dissipation-Max :

47W Tc

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Vgs(th) (Max) @ Id :

2V @ 14µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

445pF @ 25V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.085Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Rds On (Max) @ Id, Vgs :

64m Ω @ 8A, 10V

Surface Mount :

yes

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

43 mJ

Pulsed Drain Current-Max (IDM) :

76A

Mounting Type :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Pin Count :

4

Drain Current-Max (Abs) (ID) :

19A

Transistor Application :

SWITCHING

Terminal Finish :

TIN LEAD

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2