SPB80P06PGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

13 Weeks

Power Dissipation :

340W

Current Rating :

-80A

Voltage - Rated DC :

-60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

340W Tc

Terminal Position :

Single

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

56 ns

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Series :

SIPMOS®

Lead Free :

Contains Lead

Number of Pins :

3

Max Junction Temperature (Tj) :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 5.5mA

Continuous Drain Current (ID) :

-80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

No

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Turn On Delay Time :

24 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

30 ns

Threshold Voltage :

-3V

Drain to Source Breakdown Voltage :

-60V

Number of Terminations :

2

Max Dual Supply Voltage :

-60V

Height :

4.4mm

Rds On (Max) @ Id, Vgs :

23m Ω @ 64A, 10V

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5033pF @ 25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Published :

1999

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

18ns