SPB80N03S2L05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

220

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Power Dissipation-Max :

167W Tc

Drain Current-Max (Abs) (ID) :

80A

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

89.7nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 110μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 55A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3.32pF @ 25V

Surface Mount :

yes

FET Type :

N-Channel

Terminal Finish :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

325 mJ

Series :

OptiMOS™

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0072Ohm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

Pbfree Code :

No

DS Breakdown Voltage-Min :

30V

Pin Count :

4

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)