SPB80N03S2L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0092Ohm

Number of Elements :

1

Number of Terminations :

2

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 80A, 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 80μA

Published :

2003

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current Rating :

80A

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

320A

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Pin Count :

4

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

150W Tc

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Avalanche Energy Rating (Eas) :

240 mJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

23ns

Terminal Form :

Gull wing