SPB80P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

Mounting Type :

Surface Mount

Series :

SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds :

5033pF @ 25V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

340W Tc

Terminal Position :

Single

FET Type :

P-Channel

Current Rating :

-80A

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

824 mJ

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

23m Ω @ 64A, 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 5.5mA

Continuous Drain Current (ID) :

80A

Voltage - Rated DC :

-60V

ECCN Code :

EAR99

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain-source On Resistance-Max :

0.023Ohm

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1999

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Terminal Finish :

Tin/Lead (Sn/Pb)