SPB80N08S2L-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Vgs (Max) :

±20V

Series :

OptiMOS™

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Voltage - Rated DC :

75V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Pin Count :

4

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.0087Ohm

Input Capacitance (Ciss) (Max) @ Vds :

6820pF @ 25V

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Avalanche Energy Rating (Eas) :

810 mJ

Gate Charge (Qg) (Max) @ Vgs :

233nC @ 10V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 67A, 10V

Terminal Position :

Single

Lead Free :

Contains Lead

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

320A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Current Rating :

80A

Continuous Drain Current (ID) :

80A

JESD-609 Code :

e3