SPB80N08S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

810 mJ

Number of Elements :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

320A

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0071Ohm

Qualification Status :

Not Qualified

Voltage - Rated DC :

75V

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

6130pF @ 25V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 66A, 10V

JESD-609 Code :

e3

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

80A

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Published :

2003