SPB80N06S2L-H5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

700 mJ

Additional Feature :

AVALANCHE RATED

Current Rating :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Published :

2003

Number of Terminations :

2

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Finish :

TIN LEAD

Terminal Position :

Single

Voltage - Rated DC :

55V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 230μA

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

320A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0065ohm

Series :

OptiMOS™

JESD-609 Code :

e0

Power Dissipation-Max :

300W Tc

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V