SPB80N06S2L-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

55V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Published :

2003

Series :

OptiMOS™

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

370 mJ

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 52A, 10V

Current Rating :

80A

Drain-source On Resistance-Max :

0.0113Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

190W Tc

Terminal Finish :

MATTE TIN

Number of Elements :

1

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Position :

Single

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

80A

Number of Terminations :

2

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

Vgs(th) (Max) @ Id :

2V @ 125μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON