SPB80N06S2L-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Terminal Position :

Single

Qualification Status :

Not Qualified

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Series :

OptiMOS™

Case Connection :

DRAIN

JESD-609 Code :

e0

Input Capacitance (Ciss) (Max) @ Vds :

4210pF @ 25V

Drain-source On Resistance-Max :

0.01Ohm

Published :

2003

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Current Rating :

80A

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

210W Tc

Vgs(th) (Max) @ Id :

2V @ 150μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

450 mJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc